Zvn3306 datasheet pdf storage

Offer zvn3306fta diodes incorporated from kynix semiconductor hong kong limited. Electrical characteristics at tamb 25c unless otherwise stated. Storage temperature, tstg 55 150 c 1 stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. Zvp3306a pchannel enhancement mode vertical dmos fet datasheet. Pure storage flasharrayx, the worlds first 100% allflash endtoend nvme and nvmeof array, now optionally includes a storage class memory boost to address the most demanding enterprise applications performance requirements. S7115003000 601 395 device operation commands are used to initiate the memory operation functions of the device.

Zvn3320f nchannel enhancement mode vertical dmos fet datasheet. Zvn3306a nchannel enhancement mode vertical dmos fet. Mosfet nch 60v 270ma to923 online from elcodis, view and download zvn3306a pdf datasheet, mosfets, ganfets single specifications. Zvn3306 datasheet, cross reference, circuit and application notes in pdf. Simply order before 8pm and we will aim to ship instock items the same day so that it is delivered to you the next working day. Zvn3306f nchannel enhancement mode vertical dmos fet datasheet. Parameter symbol value unit drainsource voltage v ds 60 v continuous drain current at t amb25c i d 450 ma pulsed drain current i dm 8a gate source voltage v gs 20 v power dissipation at t amb25c p tot 700 mw. Zvn3306f nchannel enhancement mode vertical dmos fet datasheet keywords. Tamb25c ptot 2 w operating and storage temperature range tj. By using ibm storwize v7000 storage system and ibm san volume controller functions, interoperability, and management tools, storwize v3700 delivers innovation and new levels of. Zvn3306a nchannel enhancement mode vertical dmos fet datasheet keywords. Zvp2106a pchannel enhancement mode vertical dmos fet datasheet. Offer zvn3306a zetex from kynix semiconductor hong kong limited.

Power mosfets diodes incorporated offers a broad range of power mosfets, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. Zvn3306 datasheet, cross reference, circuit and application notes in pdf format. Zvn330 datasheet, zvn330 pdf, zvn330 data sheet, zvn330 manual, zvn330 pdf, zvn330, datenblatt, electronics zvn330, alldatasheet, free, datasheet, datasheets, data. Parameter symbol value unit drainsource voltage v ds 60 v continuous drain current at t amb25c i d 150 ma pulsed drain current i dm 3a gatesource. P2n2222a amplifier transistors npn silicon features these are pb. Productrank ktc3205o ktc3205y range 100200 160320 absolute maximum ratings t a 25 c unless otherwise specified parameter symbol rating unit collector to base voltage vcbo 30 v collector to emitter voltage vceo 30 v emitter to base voltage vebo 5 v continuous collector current ic 2 a collector power dissipation pc 1 w. Data sheet pure storage flasharrayx accelerate core applications and provide a modern data experience. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions. Nchannel enhancement mode vertical dmos fet, zvn3306f datasheet, zvn3306f circuit, zvn3306f data sheet. Zvn3306a datasheet, cross reference, circuit and application notes in pdf format.

Nchannel enhancement mode vertical dmos fet issue 2 march 94 features 60 volt v ds r dson 2. Stg storage temperature range soldering temperature, for 10 seconds 1. Zvn3306a transistor datasheet, zvn3306a equivalent, pdf data sheets. Free devices maximum ratings ta 25c unless otherwise noted characteristic symbol value unit collector. Sot23 nchannel enhancement mode vertical dmos fet issue 3 january 1996 features 60volt v ds r dson 5. Zvn3306f nchannel enhancement mode vertical dmos fet datasheet author. Nchannel enhancement 0a zvn2110a mode vertical dmos fet issue 2 march 94 features 100 volt vds vgs 10v rdson 4. Zetex zvn3306f nchannel enhancement mode vertical dmos fet datasheet 60 volt vds rdson 5o sot23. Computer memory or storage devices storage devices are the devices that are used for data storage in the computers. Electrical characteristics at tamb 25c unless otherwise.

Mosfet nch 60v 150ma sot233 online from elcodis, view and download zvn3306fta pdf datasheet, mosfets, ganfets single specifications. Zetex, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. The package drawings in this data sheet may not reflect the most current specifications. Parameter symbol byv26dgp byv26egp unit typical thermal resistance r ja 1 70 cw r jl 2 16 ordering information example preferred pn unit weight g preferred package code base quantity delivery mode byv26egpe354 0. Millions of components are available from our stock. Vn2210 nchannel enhancementmode vertical dmos fet data. Diodes incorporated zvn3306 series mosfet are available at mouser electronics. Zvn3310f 100v nchannel enhancement mode mosfet sot23 high pulse current handling in linear mode low input capacitance fast switching speed lead free by designrohs compliant general purpose 100v fet power management disconnect switches telecoms complementary type zvp3310f. Kynix is a global electronic component distributor,specializing in providing integrated circuits,modules,discrete,capacitors,resistors,crystals,oscillators,connectors,flash,memory,and so on. Thgbmhg9c8lbawg datasheet html 1 page toshiba semiconductor. Ibm storwize v3700 for lenovo product guide ibm storwize v3700 storage system for lenovo machine type 6099 is a member of the ibm storwize family of disk systems. Pchannel enhancement mode vertical dmos fet issue 2 march 94 features 60 volt v ds r dson 5.

Parameter symbol value unit drainsource voltage v ds60 v continuous drain current at t amb25c i d280 ma pulsed drain current i dm4 a gate source voltage v gs 20 v power dissipation at t amb25c p tot 700 mw. Zvn3306f nchannel enhancement mode vertical dmos fet. Sot23 nchannel enhancement mode vertical dmos fet issue 3 january 1996 features r dson 5. Gatesource voltage power dissipation at tamb250c operating and storage temperature, amps vokeqie voks dram current sourc9 ldon onstate zvn3306a typical. Parameter symbol value unit drainsource voltage v ds 200 v continuous drain current at t amb25c i d 60 ma pulsed drain current i dm 1a gatesource voltage v gs 20 v power. Zvn3306a 3375 d g s typical characteristics vds drain source voltage volts i do n t. Zvp2106 datasheet, cross reference, circuit and application notes in pdf format.

Diodes incorporated zvn3306 series mosfet datasheets mouser. Parameter symbol value unit drainsource voltage vds60 v continuous drain current at tamb25c id160 ma pulsed drain current idm1. Sot23 nchannel enhancement mode vertical dmos fet issue 3 december 1995 features 200 volt v ds r dson 25. Commands are written to the device using standard microprocessor write sequences. The supertex hv2201 is a low charge injection, 8channel, high voltage analog switch integrated circuit ic. Kynix electronics memory, flash, ic, integrated circuits. Drv10866 5v, 3phase, sensorless bldc motor driver datasheet. The device can be used in applications requiring high voltage switching controlled by low voltage control signals, such as medical ultrasound imaging, piezoelectric transducer drivers, and printers.